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RF Device Data
Freescale Semiconductor
MRF1517NT1
TYPICAL CHARACTERISTICS, 480 - 520 MHz
Pin
= 27 dBm
VDD
= 7.5 Vdc
142
3568791011
Pout, OUTPUT POWER (WATTS)
50
10
80
Eff, DRAIN EFFICIENCY (%)
30
60
40
Eff, DRAIN EFFICIENCY (%)
Figure 4. Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
8
6
14
Figure 5. Drain Efficiency versus Output Power
2
GAIN (dB)
Figure 6. Output Power versus Biasing Current
12
IDQ, BIASING CURRENT (mA)
0
Figure 7. Drain Efficiency versus Biasing Current
80
IDQ, BIASING CURRENT (mA)
Figure 8. Output Power versus Supply Voltage
0
5
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
30
69107
5
678 10
9
8
0
40
60
60
30
400
0
4
12
600 1000800
80
2
4
6
10
18
200
50
12
P
out
, OUTPUT POWER (WATTS)
200 1000400 600
800
P
out
, OUTPUT POWER (WATTS)
3
1
2
6
Eff, DRAIN EFFICIENCY (%)
50
70
500 MHz
520 MHz
480 MHz
4791056
8
16
70
20
500 MHz
520 MHz
480 MHz
8
500 MHz
520 MHz
480 MHz
70
500 MHz
520 MHz
480 MHz
10
8
500 MHz
520 MHz
480 MHz
500 MHz
520 MHz
480 MHz
10
40
VDD
= 7.5 Vdc
VDD
= 7.5 Vdc
Pin
= 27 dBm
VDD
= 7.5 Vdc
Pin
= 27 dBm
IDQ
= 150 mA
Pin
= 27 dBm
IDQ
= 150 mA
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相关代理商/技术参数
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MRF1518NT1 功能描述:射频MOSFET电源晶体管 RF LDMOS FET PLD1.5N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF1518NT1_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF1518NT1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor